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10/2002 v bias i in v ref dc offset control low pass filter c ext v ee v out v out ATA7609 10 gb/s high overload tia preliminary data sheet - rev 1.0 d1 die features ? 1800 ? differential transimpedance 3 mapp maximum input current 14 pa/ hz input noise current density single ?5.2 v power supply low group delay outputs dc or ac coupled same functionality as ata7603 with the output polarities reversed applications sonet/sdh oc-192 /stm-64 vsr, short-reach, intermediate-reach, and long-reach receivers 10 gb/s ethernet fiber optic receivers, transceivers, and transponders product description the anadigics ATA7609 is a ?5.2 v high-speed transimpedance amplifier (tia) designed for 10 gb/s optical receiver applications available in bare die form and manufactured using an ingap based hbt process. the device is used in conjunction with a photodetector to convert an optical signal into a differential output voltage that can be ac or dc coupled to a post amplifier. the ATA7609 has an internal overload support circuit and can accept optical inputs as high as +3 dbm. with its low noise and high optical overload capability, the device is well suited for 10 gb/s ethernet and oc-192 very short-reach (vsr), short-reach, intermediate-reach and long-reach optical receivers, transceivers and transponders. the ATA7609 is identical to the ata7603 but with the output polarities reversed. figure 1: circuit block diagram i in v out c ext v ee gnd gnd gnd gnd v ee v out gnd
2 preliminary data sheet - rev 1.0 10/2002 ATA7609 286 m 170 m 140 m 303 m i in v out c ext v ee gnd gnd gnd gnd ATA7609 die size: 1000 m x 910 m die thickness: 178 m backside metal thickness: 5 m pad opening: 100 m x 100 m unless otherwise noted pad pitch 150 m unless otherwise noted gnd 286 m v ee v out figure 2: die size and layout table 1: pad description d a p n o i t p i r c s e d s t n e m m o c v e e e g a t l o v y l p p u s e v i t a g e nv 2 . 5 - d n gd n u o r g i n i t u p n i a i tt u p n i t n e r r u c o t o h p c t x e r o t i c a p a c l a n r e t x e n a r o f n o i t c e n n o cf f o t u c y c n e u q e r f w o l e h t s t e s v t u o e g a t l o v t u p t u o d e t r e v n i - n o nt u p n i l a c i t p o h t i w ' 1 ' l a c i g o l v t u o e g a t l o v t u p t u o d e t r e v n it u p n i l a c i t p o h t i w ' 0 ' l a c i g o l
preliminary data sheet - rev 1.0 10/2002 ATA7609 3 electrical characteristics table 2: absolute minimum and maximum ratings stresses in excess of the absolute ratings may cause permanent damage. functional operation is not implied under these conditions. exposure to absolute ratings for extended periods of time may adversely affect reliability. table 3: recommended operating conditions the device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. r e t e m a r a p n i m x a m t i n u v ( y l p p u s r e w o p c d e e )0 . 7 -0 . 1v e r u t a r e p m e t e g a r o t s5 6 -5 2 1c t n e r r u c t u p n i c d-0 . 5a m ) l e d o m y d o b n a m u h ( y t i v i t i s n e s d s e0 0 1-v r e t e m a r a p n i m p y t x a m t i n u e g n a r e g a t l o v g n i t a r e p o0 5 . 5 -2 . 5 -0 9 . 4 - v e g n a r e r u t a r e p m e t g n i t a r e p o ) 1 ( 0 4 --5 8 o c e r u t a r e p m e t h c a t t a e i d--0 6 2 o c ) y a r t s + n i p ( e c n a t i c a p a c e d o i d o t o h p-5 2 2 . 03 . 0f p y t i v i s n o p s e r e d o i d o t o h p-2 9 . 0-w / a e c n a t s i s e r t c a t n o c e d o i d o t o h p-0 15 1 ? e c n a t c u d n i e r i w d n o b t u p n i7 . 00 . 1- h n notes: (1) defined at the interface between the die and the substrate.
4 preliminary data sheet - rev 1.0 10/2002 ATA7609 table 4: dc electrical specifications r e t e m a r a p n i m p y t x a m t i n u ) s t u p t u o d e l p u o c c d ( t n e r r u c y l p p u s-5 90 2 1a m e g a t l o v t e s f f o t u p n i-7 . 3 --v ) s t r o p h t o b ( e g a t l o v t e s f f o t u p t u o-2 . 0 --v table 5: ac electrical specifications (1) (v ee = -5.5 v to -4.9 v, operating temperature = -40 c to + 85 c unless otherwise noted) r e t e m a r a p n i m p y t x a m t i n u r ( e c n a d e p m i s n a r t l a i t n e r e f f i d l a n g i s l l a m s l= 0 0 1 ? )0 0 3 10 0 8 1- ? r ( e c n a d e p m i s n a r t l a i t n e r e f f i d l a n g i s l l a m s l= 0 0 1 ? ) ) 2 ( 0 0 4 1-- ? h t d i w d n a b l a n g i s l l a m s5 . 85 . 9- z h g f f o t u c y c n e u q e r f w o l ) 3 ( -0 3- z h k g n i k a e p--5 . 1b d ) z h g 0 . 8 o t z h m 0 0 5 ( n o i t a i v e d y a l e d p u o r g ) 4 ( -0 3- s p ) z h g 5 . 9 o t z h g 8 ( n o i t a i v e d y a l e d p u o r g ) 4 ( -0 4- s p t n e r r u c t u p n i m u m i x a m--0 . 3p p a m d a o l r e v o l a c i t p o ) 5 ( -3 +- m b d t n e r r u c e s i o n s m r d e r r e f e r t u p n i ) 6 ( -4 . 1- a y t i s n e d t n e r r u c e s i o n d e r r e f e r t u p n i e g a r e v a ) 6 ( -4 10 2/ a p z h y t i v i t i s n e s l a c i t p o ) 5 ( -9 1 -- m b d g n i w s e g a t l o v t u p t u o d e d n e - e l g n i s m u m i x a m-0 0 40 5 5p p v m ) z h g 8 o t z h m 0 1 ( s s o l n r u t e r t u p t u o--0 1 -b d ) z h g 0 2 o t z h m 8 ( s s o l n r u t e r t u p t u o- - 5 -b d notes: (1) the specifications are based upon the use of a pin photodiode with a responsivity of 0.92 a/w and a capacitance of c diode + c stray = 0.3 pf max connected to i in via a 1.0 nh bond wire. (2) operating temperature range = -5 c to +85 c. (3) with the use of an external 10 nf capacitor. (4) maximum value - minimum value (5) measured at 10 -10 ber with a 2 23 -1 prbs at 10 gb/s (6) bandwidth = 9 ghz
preliminary data sheet - rev 1.0 10/2002 ATA7609 5 performance data 3 db bandwidth = 9.9 ghz 15.2 18.2 21.2 24.2 27.2 024681012 frequency(ghz) response(db) figure 3: typical small signal frequency response figure 4: typical small signal group delay 180 200 220 240 260 280 300 320 024681012 frequency(ghz) group delay (ps) 55 56 57 58 59 60 61 62 63 64 65 024681012 frequency (ghz) gain (db) lin = 30mils, bw = 9.3ghz lin = 35mils, bw = 9.6ghz lin = 40mils, bw = 9.9ghz lin = 45mils, bw = 10.6ghz lin = 50mils, bw = 10.9ghz lin = 55mils, bw = 11.1ghz lin = 60mils, bw = 11.1ghz figure 5: bandwidth vs. input inductance figure 6: differential transimpedance vs. input current 0.000 0.500 1.000 1.500 2.000 2.500 3.000 10 100 1000 10000 input current (uapp) tz (kohms) vee=-5.2v vee=-4.9v vee=-5.5v 0 100 200 300 400 500 600 700 800 900 0 200 400 600 800 1000 input current (uapp) output voltage (mvpp) vee=-5.2v vee=-4.9v vee=-5.5v figure 7: differential output voltage vs. input current up to 1000 app 0 100 200 300 400 500 600 700 800 900 0 500 1000 1500 2000 2500 3000 3500 4000 input current (uapp) output voltage (mvpp) vee=-5.2v vee=-4.9v vee=-5.5v figure 8: differential output voltage vs. input current up to 4000 app
6 preliminary data sheet - rev 1.0 10/2002 ATA7609 -40 -35 -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 101214161820 frequency (ghz) s22 (db) figure 14: s22 from evaluation test fixture figure 9: eye diagram with an optical input power of -18 dbm figure 10: eye diagram with an optical input power of -10 dbm figure 11: eye diagram with an optical input power of 0 dbm figure 12: eye diagram with an optical input power of +3 dbm figure 13: eye diagram with an optical input power of +4 dbm
preliminary data sheet - rev 1.0 10/2002 ATA7609 7 application information ceramic substrate ground pads c 10nf ext 2nh typical 1.0 nh typical kovar pedestal photo- diode ATA7609 470 pf 470 pf 10 nf v bias v ee v (50 ) out 220 pf v bypass mim capacitor ee v (50 ) out all die bonds are 0.5 nh typical unless otherwise noted figure 15: bonding diagram
8 preliminary data sheet - rev 1.0 10/2002 ATA7609 packaging and testing the ATA7609 is provided as bare die. for optimum performance, the die should be packaged in a hermetic enclosure and a low inductance ground plane should be made available for power supply bypassing and ground bonds. when packaging the ATA7609, the temperature of the die must be kept below 260 c to ensure device reliability. the ATA7609 has backside metal but no ground vias are connected to the backside of the die, so it is critical to bond all of the ground pads to reduce ground inductance. the die can be attached to the substrate using epoxy or solder. a good thermally conductive, silver-filled epoxy is recommended for epoxy mounting. if solder is used for die attach, exposure to temperatures at or above 260 c must be limited to ensure the device reliability. a soft silicon/rubber tip collet should be used for die mounting, although tweezers can be used with extreme care. thermosonic ball bonding, at a stage temperature of 150 to 175 c, with 1 to 1.3 mil gold wire, is the recommended interconnect technique. the bond force, time, and ultrasonic power are all critical parameters and should be optimized to achieve the best bonding performance. the recommended bonding parameters are: stage temperature: 175 c bond time: 15 ms bond ultrasonic power: 70 mw bond force: 70 g bond velocity: 60 mils/ms i in connection for optimal performance, the bond wire from the photodetector to i in should be around 1nh. as the inductance of this connection increases beyond 1nh, more gain peaking will occur and the group delay performance will degrade. v ee connections in order to achieve optimal performance, the v ee supply pads must be bypassed as close to the chip as possible with one or two high resonant frequency, low value capacitance, mim capacitors. in either case, both v ee bond pads need to be connected to reduce the supply bond wire inductance. v out and v out connections the ATA7609 provides a differential output that can be ac or dc coupled to the next stage of the receiver. the output bond wires should be kept below 1 nh for the best performance. if the device is being used in a single-ended configuration, the unused output port must be terminated into 50 ? . c ext connection in order to achieve the desired low frequency cutoff, an external capacitor is required. a low inductance multilayer chip capacitor of value 10 nf is recommended. rf testing the following parameters are 100% rf tested on wafer in production at -5.2v at room temperature with 0 input forced current and 1.6ma dc input current: current, transimpedance, bandwidth, peaking, group delay, s11, s22, input offset voltage and output offset voltage. all other parameters are guaranteed by design.
preliminary data sheet - rev 1.0 10/2002 ATA7609 9 typical application circuits v bias v ee 50 v out ATA7609 10 nf v ee v out i in c ext v out v out dc out dc out v ee v ee v ee vos ee ala7606 v in v in 100 nf 50 v bias v ee 50 v out ATA7609 10 nf v ee v out i in c ext v out v out dc out dc out v ee v ee v ee vos ee ala7606 v in v in 100 nf 50 figure 16: ATA7609 dc coupled to the ala7606 figure 17: ATA7609 ac coupled to the ala7606
10 preliminary data sheet - rev 1.0 10/2002 ATA7609 notes
preliminary data sheet - rev 1.0 10/2002 ATA7609 11 notes
warning anadigics products are not intended for use in life support appliances, devices or systems. use of an anadigics product in any such application without written consent is prohibited. important notice anadigics, inc. 141 mount bethel road warren, new jersey 07059, u.s.a. tel: +1 (908) 668-5000 fax: +1 (908) 668-5132 url: http://www.anadigics.com e-mail: mktg@anadigics.com anadigics, inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. the product specifications contained in advanced product information sheets and preliminary data sheets are subject to change prior to a product?s formal introduction. information in data sheets have been carefully checked and are assumed to be reliable; however, anadigics assumes no responsibilities for inaccuracies. anadigics strongly urges customers to verify that the information they are using is current before placing orders. preliminary data sheet - rev 1.0 10/2002 12 ATA7609 ordering information r e b m u n r e d r o e r u t a r e p m e t e g n a r e g a k c a p n o i t p i r c s e d g n i g a k c a p t n e n o p m o c 1 d 9 0 6 7 a t a0 4 - o 5 8 + o t c o c1 de i d

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